Infineon Technologies - IRF9395MTR1PBF

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IRF9395MTR1PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF9395MTR1PBF
Description P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: UNSPECIFIED; Maximum Pulsed Drain Current (IDM): 110 A;
Datasheet IRF9395MTR1PBF Datasheet
In Stock94
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 110 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 57 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .007 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 75 A
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