Infineon Technologies - IRF9530NLPBF

IRF9530NLPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF9530NLPBF
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Package Style (Meter): IN-LINE; JEDEC-95 Code: TO-262AA;
Datasheet IRF9530NLPBF Datasheet
In Stock294
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 250 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
JEDEC-95 Code: TO-262AA
Maximum Pulsed Drain Current (IDM): 56 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .2 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
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