Infineon Technologies - IRF9952TR

IRF9952TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF9952TR
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 44 mJ;
Datasheet IRF9952TR Datasheet
In Stock589
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.5 A
Maximum Pulsed Drain Current (IDM): 16 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .1 ohm
Moisture Sensitivity Level (MSL): 2
Avalanche Energy Rating (EAS): 44 mJ
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
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Pricing (USD)

Qty. Unit Price Ext. Price
589 $1.410 $830.490

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