Infineon Technologies - IRF9Z25

IRF9Z25 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF9Z25
Description	P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (ID): 8.9 A; Maximum Drain Current (Abs) (ID): 8.9 A;
Datasheet	IRF9Z25 Datasheet
In Stock	301

IRF9Z25 Technical Details

NAME	DESCRIPTION
Maximum Power Dissipation (Abs):	40 W
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Operating Mode:	ENHANCEMENT MODE
Maximum Drain Current (ID):	8.9 A
Maximum Drain Current (Abs) (ID):	8.9 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0

Pricing (USD)

Qty.	Unit Price	Ext. Price
301	-	-

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