Infineon Technologies - IRF9Z25

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IRF9Z25 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF9Z25
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (ID): 8.9 A; Maximum Drain Current (Abs) (ID): 8.9 A;
Datasheet IRF9Z25 Datasheet
In Stock301
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 40 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (ID): 8.9 A
Maximum Drain Current (Abs) (ID): 8.9 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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