Infineon Technologies - IRFAG30

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IRFAG30 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFAG30
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Minimum DS Breakdown Voltage: 1000 V; JESD-609 Code: e0;
Datasheet IRFAG30 Datasheet
In Stock199
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.3 A
Maximum Pulsed Drain Current (IDM): 9.2 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 2
Maximum Power Dissipation (Abs): 75 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 6.5 ohm
Avalanche Energy Rating (EAS): 110 mJ
JEDEC-95 Code: TO-204AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2.3 A
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Pricing (USD)

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