Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRFB4212PBF |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT; |
| Datasheet | IRFB4212PBF Datasheet |
| In Stock | 709 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 18 A |
| Maximum Pulsed Drain Current (IDM): | 57 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 60 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .0725 ohm |
| Avalanche Energy Rating (EAS): | 25 mJ |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Additional Features: | HIGH RELIABILITY |
| Maximum Drain Current (Abs) (ID): | 18 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
