Infineon Technologies - IRFD025

  1. Home
  2. Infineon Technologies - IRFD025
IRFD025 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRFD025
Description N-CHANNEL; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 60 V; Package Style (Meter): IN-LINE; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet IRFD025 Datasheet
In Stock238
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T3
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .12 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
238 - -

Popular Products

Category Top Products

2N7000 by Taitron Components

2N7000

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Minimum Operating Temperature: -55 Cel;
BSS138NE6433 by Infineon Technologies

BSS138NE6433

Infineon Technologies

BSS138NE6433 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is surface mountable and has a max drain current of 0.23A. This transistor is commonly used in applications requiring enhancement mode operation and low power dissipation.
BSS123 by National Semiconductor

BSS123

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
FDC5614P by Fairchild Semiconductor

FDC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
BSS131E6327 by Infineon Technologies

BSS131E6327

Infineon Technologies

Infineon BSS131E6327 is a N-CHANNEL FET with 240V DS breakdown voltage, 0.11A drain current, and 14 ohm on-resistance. Ideal for small signal applications, it operates in enhancement mode with a max power dissipation of 0.36W. Its GULL WING terminals and compact design make it suitable for surface mount configurations.
NTJD4001NT1G by Onsemi

NTJD4001NT1G

Onsemi

NTJD4001NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 30V DS breakdown voltage, 0.25A drain current, and 2.5 ohm on resistance. Ideal for small outline packages in high-temp environments up to 150°C.
LND150N3-GP003 by Supertex

LND150N3-GP003

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Terminal Form: THROUGH-HOLE; Operating Mode: DEPLETION MODE;
BSS138 by Panjit International

BSS138

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
NDS7002A by Rochester Electronics

NDS7002A

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
BSS123LT3G by Onsemi

BSS123LT3G

Onsemi

BSS123LT3G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. Its small outline package makes it suitable for surface mount designs.
326 by Nte Electronics

326

Nte Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION;
FDC640P by Onsemi

FDC640P

Onsemi

The Onsemi FDC640P is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.5A, 0.053 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
2N7002W by Weitron Technology

2N7002W

Weitron Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
NDC7003P by Onsemi

NDC7003P

Onsemi

NDC7003P by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.34A, operating at 150°C with a breakdown voltage of 60V. With a package style of small outline and gull wing terminals, it offers efficient performance in compact designs.
FDC6333C by Fairchild Semiconductor

FDC6333C

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Drain-Source On Resistance: .095 ohm; JESD-609 Code: e3;
ZXMP6A13FTA by Diodes Incorporated

ZXMP6A13FTA

Diodes Incorporated

ZXMP6A13FTA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 1.1A Drain Current, and 0.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150°C.
FDV302PD87Z by Fairchild Semiconductor

FDV302PD87Z

Fairchild Semiconductor

Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
BSS127H6327XTSA2 by Infineon Technologies

BSS127H6327XTSA2

Infineon Technologies

Infineon Technologies' BSS127H6327XTSA2 is a small signal N-channel FET with a min DS breakdown voltage of 600V. It operates in enhancement mode and has a max drain current of 0.021A. This transistor is commonly used in applications requiring high voltage switching and amplification.
2N7000-G by Comchip Technology

2N7000-G

Comchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Transistor Element Material: SILICON; JESD-30 Code: O-PBCY-T3;
NTR4170NT1G by Onsemi

NTR4170NT1G

Onsemi

NTR4170NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 3.2A ID, and 0.055 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. This small outline transistor has a max power dissipation of 1.25W and can withstand temperatures up to 150°C.