Infineon Technologies - IRFE230

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IRFE230 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFE230
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 22 W; JESD-609 Code: e0; Avalanche Energy Rating (EAS): 98 mJ;
Datasheet IRFE230 Datasheet
In Stock105
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.5 A
Maximum Pulsed Drain Current (IDM): 22 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 15
Maximum Power Dissipation (Abs): 22 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CQCC-N15
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .46 ohm
Avalanche Energy Rating (EAS): 98 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 4.8 A
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