Infineon Technologies - IRFG6113

  1. Home
  2. Infineon Technologies - IRFG6113
IRFG6113 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRFG6113
Description N-CHANNEL AND P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): .85 A; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRFG6113 Datasheet
In Stock941
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2.5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .85 A
Maximum Drain Current (Abs) (ID): .85 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
941 - -

Popular Products

Category Top Products

IRFP460PBF by Vishay Siliconix

IRFP460PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain-Source On Resistance: .27 ohm; Avalanche Energy Rating (EAS): 960 mJ;
IRF640 by Vishay Siliconix

IRF640

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
BSS123 by Calogic

BSS123

Calogic

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Operating Mode: ENHANCEMENT MODE;
IRLR024NTRPBF by International Rectifier

IRLR024NTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
FDS3890 by Fairchild Semiconductor

FDS3890

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
IRF7319TRPBF by International Rectifier

IRF7319TRPBF

International Rectifier

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
FDD5614P by Fairchild Semiconductor

FDD5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
NDT456P by National Semiconductor

NDT456P

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 7.5 A; No. of Elements: 1;
FDD5614P by Onsemi

FDD5614P

Onsemi

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
IRF840PBF by Vishay Intertechnology

IRF840PBF

Vishay Intertechnology

Vishay Intertechnology's IRF840PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 32A IDM and 510mJ EAS ratings. The transistor operates in ENHANCEMENT MODE with 0.85 ohm RDS(on) and can handle up to 125W power dissipation.
PSMN4R8-100BSEJ by NXP Semiconductors

PSMN4R8-100BSEJ

NXP Semiconductors

PSMN4R8-100BSEJ by NXP is a single N-channel power FET with 120A max drain current and 405W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as automotive systems or industrial equipment.
SQJ479EP-T1_GE3 by Vishay Intertechnology

SQJ479EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ479EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 100A IDM, and 0.033 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
IRF3205ZLPBF by International Rectifier

IRF3205ZLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFP460PBF by Infineon Technologies

IRFP460PBF

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
PSMN040-100MSEX by Nexperia

PSMN040-100MSEX

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Avalanche Energy Rating (EAS): 54 mJ; Transistor Application: SWITCHING;
IRFL9014PBF by Vishay Siliconix

IRFL9014PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G3; No. of Terminals: 3; No. of Elements: 1;
IRF3205PBF by Infineon Technologies

IRF3205PBF

Infineon Technologies

IRF3205PBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage and 390A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE. With 0.008 ohm RDS(on), it can handle up to 75A ID current efficiently.
IRF9640STRLPBF by Vishay Intertechnology

IRF9640STRLPBF

Vishay Intertechnology

Vishay Intertechnology's IRF9640STRLPBF is a P-CHANNEL FET with 200V DS breakdown voltage and 44A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 0.5 ohm on-resistance and 125W power dissipation.
ZVN0545GTA by Zetex Plc

ZVN0545GTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: R-PDSO-G4; Maximum Drain Current (ID): .14 A;
FDS6982AS_NL by Fairchild Semiconductor

FDS6982AS_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.