Infineon Technologies - IRFG6113

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IRFG6113 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFG6113
Description N-CHANNEL AND P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): .85 A; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRFG6113 Datasheet
In Stock941
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2.5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .85 A
Maximum Drain Current (Abs) (ID): .85 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
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