Infineon Technologies - IRFH4020PBF

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IRFH4020PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFH4020PBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 21 W; Minimum DS Breakdown Voltage: 200 V; Avalanche Energy Rating (EAS): 130 mJ;
Datasheet IRFH4020PBF Datasheet
In Stock139
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 9.1 A
Maximum Pulsed Drain Current (IDM): 36 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 5
Maximum Power Dissipation (Abs): 21 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .1 ohm
Avalanche Energy Rating (EAS): 130 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 9.1 A
Peak Reflow Temperature (C): 250
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