Infineon Technologies - IRFH7185TRPBF

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IRFH7185TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFH7185TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-N5; Transistor Application: SWITCHING;
Datasheet IRFH7185TRPBF Datasheet
In Stock929
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 360 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 19 A
Maximum Pulsed Drain Current (IDM): 260 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 100 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0052 ohm
Moisture Sensitivity Level (MSL): 1
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