Infineon Technologies - IRFHM8337TRPBF

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IRFHM8337TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFHM8337TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 30 V;
Datasheet IRFHM8337TRPBF Datasheet
In Stock951
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 94 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0124 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 13 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 35 A
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Pricing (USD)

Qty. Unit Price Ext. Price
951 $0.200 $190.200

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