Infineon Technologies - IRFHM9331TR2PBF

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IRFHM9331TR2PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFHM9331TR2PBF
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet IRFHM9331TR2PBF Datasheet
In Stock440
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 76 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 90 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0146 ohm
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