Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRFI4019H-117PBF |
| Description | N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 18 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 8.7 A; |
| Datasheet | IRFI4019H-117PBF Datasheet |
| In Stock | 346 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 18 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 8.7 A |
| Maximum Drain Current (Abs) (ID): | 8.7 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |









