Infineon Technologies - IRFP3710PBF

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IRFP3710PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFP3710PBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 530 mJ; Transistor Application: SWITCHING;
Datasheet IRFP3710PBF Datasheet
In Stock1,317
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 57 A
Maximum Pulsed Drain Current (IDM): 180 A
Surface Mount: NO
Terminal Finish: MATTE TIN OVER NICKEL
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .025 ohm
Avalanche Energy Rating (EAS): 530 mJ
JEDEC-95 Code: TO-247AC
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Additional Features: AVALANCHE RATED
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