Infineon Technologies - IRFP4768PBF

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IRFP4768PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFP4768PBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .0175 ohm; JEDEC-95 Code: TO-247AC; Package Body Material: PLASTIC/EPOXY;
Datasheet IRFP4768PBF Datasheet
In Stock2,461
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 93 A
Maximum Pulsed Drain Current (IDM): 370 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0175 ohm
Avalanche Energy Rating (EAS): 770 mJ
JEDEC-95 Code: TO-247AC
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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