Infineon Technologies - IRFR5305TR

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IRFR5305TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFR5305TR
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 280 mJ; Maximum Drain-Source On Resistance: .065 ohm;
Datasheet IRFR5305TR Datasheet
In Stock2,376
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 31 A
Maximum Pulsed Drain Current (IDM): 110 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .065 ohm
Avalanche Energy Rating (EAS): 280 mJ
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 55 V
Additional Features: AVALANCHE RATED
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