Infineon Technologies - IRFS7730-7PPBF

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IRFS7730-7PPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFS7730-7PPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
Datasheet IRFS7730-7PPBF Datasheet
In Stock787
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 269 A
Maximum Pulsed Drain Current (IDM): 990 A
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 375 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .002 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 897 mJ
Maximum Feedback Capacitance (Crss): 720 pF
JEDEC-95 Code: TO-263CB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 75 V
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