IRFZ44NL by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRFZ44NL
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 49 A; Maximum Pulsed Drain Current (IDM): 160 A; Maximum Drain-Source On Resistance: .0175 ohm;
Datasheet	IRFZ44NL Datasheet
In Stock	1,577

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	150 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	49 A
JEDEC-95 Code:	TO-262AA
Maximum Pulsed Drain Current (IDM):	160 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	55 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, HIGH RELIABILITY
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0175 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,577	-	-

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