Infineon Technologies - IRFZ46N

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IRFZ46N by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFZ46N
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 180 A;
Datasheet IRFZ46N Datasheet
In Stock185
NAME DESCRIPTION
Configuration: SINGLE WITH BUILT-IN DIODE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 43 A
Maximum Pulsed Drain Current (IDM): 180 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 55 V
Maximum Power Dissipation (Abs): 83 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 43 A
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 88 W
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