Infineon Technologies - IRG4RC10STRL

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IRG4RC10STRL by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG4RC10STRL
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 8 A; Maximum Fall Time (tf): 1100 ns; Maximum Collector-Emitter Voltage: 600 V;
Datasheet IRG4RC10STRL Datasheet
In Stock572
NAME DESCRIPTION
Maximum Collector Current (IC): 8 A
Maximum Power Dissipation (Abs): 15 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Threshold Voltage: 6 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Fall Time (tf): 1100 ns
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