Infineon Technologies - IRG5K100HF12B

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IRG5K100HF12B by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG5K100HF12B
Description N-Channel; Maximum Collector Current (IC): 100 A; Minimum Operating Temperature: -40 Cel; Maximum VCEsat: 2.6 V; Nominal Turn On Time (ton): 85000 ns; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IRG5K100HF12B Datasheet
In Stock867
NAME DESCRIPTION
Nominal Turn Off Time (toff): 610 ns
Maximum Collector Current (IC): 100 A
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 85000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.6 V
Minimum Operating Temperature: -40 Cel
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