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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRG5K100HF12B |
Description | N-Channel; Maximum Collector Current (IC): 100 A; Minimum Operating Temperature: -40 Cel; Maximum VCEsat: 2.6 V; Nominal Turn On Time (ton): 85000 ns; Maximum Gate-Emitter Voltage: 20 V; |
Datasheet | IRG5K100HF12B Datasheet |
In Stock | 867 |
NAME | DESCRIPTION |
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Nominal Turn Off Time (toff): | 610 ns |
Maximum Collector Current (IC): | 100 A |
Maximum Collector-Emitter Voltage: | 1200 V |
Nominal Turn On Time (ton): | 85000 ns |
Transistor Element Material: | SILICON |
Maximum Gate-Emitter Threshold Voltage: | 6 V |
Maximum Operating Temperature: | 150 Cel |
Maximum Gate-Emitter Voltage: | 20 V |
Case Connection: | ISOLATED |
Polarity or Channel Type: | N-Channel |
Maximum VCEsat: | 2.6 V |
Minimum Operating Temperature: | -40 Cel |