Infineon Technologies - IRG5U200HF12B

IRG5U200HF12B by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG5U200HF12B
Description	N-Channel; Maximum Collector Current (IC): 200 A; Nominal Turn Off Time (toff): 710 ns; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V; Nominal Turn On Time (ton): 130000 ns;
Datasheet	IRG5U200HF12B Datasheet
In Stock	970

IRG5U200HF12B Technical Details

NAME	DESCRIPTION
Nominal Turn Off Time (toff):	710 ns
Maximum Collector Current (IC):	200 A
Maximum Collector-Emitter Voltage:	1200 V
Nominal Turn On Time (ton):	130000 ns
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Polarity or Channel Type:	N-Channel
Maximum VCEsat:	3.5 V
Minimum Operating Temperature:	-40 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
970	-	-

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