Infineon Technologies - IRG7IC23FDPBF

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IRG7IC23FDPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7IC23FDPBF
Description N-Channel; Maximum Collector Current (IC): 18 A; Maximum Gate-Emitter Voltage: 30 V; Maximum Operating Temperature: 150 Cel; Nominal Turn On Time (ton): 163 ns; Maximum Gate-Emitter Threshold Voltage: 7 V;
Datasheet IRG7IC23FDPBF Datasheet
In Stock348
NAME DESCRIPTION
Nominal Turn Off Time (toff): 543 ns
Maximum Collector Current (IC): 18 A
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 163 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 7 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -55 Cel
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