Infineon Technologies - IRG7PH28UD1PBF

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IRG7PH28UD1PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7PH28UD1PBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Voltage: 30 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet IRG7PH28UD1PBF Datasheet
In Stock864
NAME DESCRIPTION
Maximum Collector Current (IC): 30 A
Maximum Power Dissipation (Abs): 115 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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Pricing (USD)

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864 $2.110 $1,823.040

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