Infineon Technologies - IRG7PH50K10DPBF

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR;

IXXX160N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 310A IC, and 1.8V VCEsat. Ideal for POWER CONTROL applications, it has a TOFF of 380ns and TON of 93ns. Suitable for high-power systems requiring efficient switching capabilities.

STMicroelectronics' STGB30V60DF is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a built-in diode, 225ns turn-off time, and operates up to 175°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Qualification: Not Qualified;

FPF1C2P5MF07AM by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 1.6V, it has a Max Collector-Emitter Voltage of 620V and can handle up to 39A of Max Collector Current (IC). Ideal for high-power systems requiring efficient power management.

Infineon's FS215R04A1E3DBOMA1 is an N-Channel IGBT with VCEsat of 1.7V, toff of 340ns, and Pmax of 715W. Ideal for high-power applications requiring a max VCE of 400V, such as motor drives and renewable energy systems. Operating temperatures range from -40°C to 150°C.

Infineon Technologies' FF600R12ME4AB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it offers high power dissipation up to 3350W. With fast turn-off time (toff) of 620ns and turn-on time (ton) of 230ns, this UL RECOGNIZED transistor operates b/w -40°C to 150°C efficiently.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; No. of Terminals: 3;

IKQ75N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.15V and IC of 150A. Ideal for POWER CONTROL applications, it has a max VCE of 1200V and can operate b/w -40 to 175 °C.

Infineon's SGP15N120XK is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 68ns ton. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, SINGLE configuration, and COLLECTOR case connection.

Abb's 5SNA3600E170300 IGBT features N-CHANNEL polarity, 3600A IC, and 1700V VCE. Ideal for power control applications with a complex configuration and fast ton of 835ns.

IKW50N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 396ns toff. Ideal for power control applications, it features a built-in diode, AEC-Q101 compliance, and through-hole terminals in a rectangular package.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V;

ISL9V3040D3STV by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.65 V and a max IC of 21 A. Ideal for automotive ignition applications, it features a built-in diode and resistor, operates at temperatures ranging from -55 to 175 °C, and has a peak reflow temperature of 260 C.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 210 A; Qualification: Not Qualified;

FS150R12KT4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and a nominal turn-off time of 605ns. This power control transistor is designed for applications requiring fast switching speeds in bridge configurations.

FF225R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 320A, and turn-off time of 600ns. Ideal for applications requiring high power efficiency in industrial systems.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 88 A; Nominal Turn On Time (ton): 110 ns;

FS75R12KE3B9BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 105A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.