IRG7T100HF12A by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG7T100HF12A
Description	N-Channel; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Nominal Turn On Time (ton): 145000 ns; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel;
Datasheet	IRG7T100HF12A Datasheet
In Stock	287

NAME	DESCRIPTION
Maximum Collector Current (IC):	100 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Polarity or Channel Type:	N-Channel
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	680 ns
Maximum Collector-Emitter Voltage:	1200 V
Nominal Turn On Time (ton):	145000 ns
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
287	-	-

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