Infineon Technologies - IRG7T10PM12E

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IRG7T10PM12E by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7T10PM12E
Description N-Channel; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Nominal Turn On Time (ton): 30000 ns; Maximum VCEsat: 2.2 V;
Datasheet IRG7T10PM12E Datasheet
In Stock963
NAME DESCRIPTION
Nominal Turn Off Time (toff): 880 ns
Maximum Collector Current (IC): 10 A
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 30000 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.2 V
Minimum Operating Temperature: -40 Cel
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