Infineon Technologies - IRGP4660D-EPBBF

IRGP4660D-EPBBF by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRGP4660D-EPBBF
Description	N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 100 A; Maximum Fall Time (tf): 46 ns; Maximum Operating Temperature: 175 Cel;
Datasheet	IRGP4660D-EPBBF Datasheet
In Stock	223

IRGP4660D-EPBBF Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	100 A
Maximum Power Dissipation (Abs):	330 W
Maximum Collector-Emitter Voltage:	600 V
Maximum Rise Time (tr):	56 ns
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Maximum Fall Time (tf):	46 ns

Pricing (USD)

Qty.	Unit Price	Ext. Price
223	-	-

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