Infineon Technologies - IRGR4045DTRRPBF

IRGR4045DTRRPBF by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRGR4045DTRRPBF
Description	N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 175 Cel;
Datasheet	IRGR4045DTRRPBF Datasheet
In Stock	895

IRGR4045DTRRPBF Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	12 A
Maximum Power Dissipation (Abs):	77 W
Maximum Collector-Emitter Voltage:	600 V
Maximum Rise Time (tr):	15 ns
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Maximum Fall Time (tf):	22 ns
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
895	-	-

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