IRGS4056DPBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRGS4056DPBF
Description	N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 24 A; Maximum Rise Time (tr): 24 ns; Package Style (Meter): SMALL OUTLINE;
Datasheet	IRGS4056DPBF Datasheet
In Stock	27

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	24 A
Maximum Rise Time (tr):	24 ns
Maximum Gate-Emitter Threshold Voltage:	6.5 V
JEDEC-95 Code:	TO-263AB
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	140 W
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	30 V
Maximum Fall Time (tf):	31 ns
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
27	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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