Infineon Technologies - IRGS4064DTRLPBF

IRGS4064DTRLPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGS4064DTRLPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 101 W; Maximum Collector Current (IC): 20 A; JEDEC-95 Code: TO-263AB;
Datasheet IRGS4064DTRLPBF Datasheet
In Stock57
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 20 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 23 ns
Maximum Turn On Time (ton): 60 ns
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: YES
Nominal Turn Off Time (toff): 100 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 101 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 42 ns
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 119 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 29 ns
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.91 V
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Pricing (USD)

Qty. Unit Price Ext. Price
57 $1.470 $83.790

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