Infineon Technologies - IRGS4640DTRLPBF

IRGS4640DTRLPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRGS4640DTRLPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 65 A; Maximum Operating Temperature: 175 Cel;
Datasheet IRGS4640DTRLPBF Datasheet
In Stock997
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 65 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 31 ns
Transistor Application: POWER CONTROL
Maximum Turn On Time (ton): 84 ns
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: YES
Nominal Turn Off Time (toff): 164 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 250 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 64 ns
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 156 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 41 ns
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 1.9 V
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Pricing (USD)

Qty. Unit Price Ext. Price
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