IRHE3230 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHE3230
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; JESD-609 Code: e0; Maximum Drain Current (ID): 5.5 A;
Datasheet	IRHE3230 Datasheet
In Stock	161

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5.5 A
Maximum Pulsed Drain Current (IDM):	22 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	15
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-CQCC-N15
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Drain-Source On Resistance:	.36 ohm
Avalanche Energy Rating (EAS):	240 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Additional Features:	RADIATION HARDENED
Maximum Drain Current (Abs) (ID):	5.5 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
161	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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