Infineon Technologies - IRHE7110

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IRHE7110 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHE7110
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 14 A;
Datasheet IRHE7110 Datasheet
In Stock184
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 45 ns
Maximum Drain Current (ID): 3.5 A
Maximum Pulsed Drain Current (IDM): 14 A
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 18
Maximum Power Dissipation (Abs): 15 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
Maximum Turn Off Time (toff): 80 ns
JESD-30 Code: R-CQCC-N18
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .69 ohm
Avalanche Energy Rating (EAS): 68 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Reference Standard: RH - 100K Rad(Si)
Maximum Drain Current (Abs) (ID): 3.5 A
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