Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRHF57214SESCS |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; Reference Standard: RH - 100K Rad(Si); Maximum Operating Temperature: 150 Cel; |
| Datasheet | IRHF57214SESCS Datasheet |
| In Stock | 888 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 45 ns |
| Maximum Drain Current (ID): | 2.2 A |
| Maximum Pulsed Drain Current (IDM): | 8.8 A |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 15 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| Maximum Turn Off Time (toff): | 55 ns |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 1.55 ohm |
| Avalanche Energy Rating (EAS): | 19 mJ |
| JEDEC-95 Code: | TO-205AF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 250 V |
| Reference Standard: | RH - 100K Rad(Si) |
| Maximum Drain Current (Abs) (ID): | 2.2 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
