Infineon Technologies - IRHF597130SCV

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IRHF597130SCV by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHF597130SCV
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Drain-Source On Resistance: .24 ohm; Terminal Form: WIRE;
Datasheet IRHF597130SCV Datasheet
In Stock157
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 75 ns
Maximum Drain Current (ID): 6.7 A
Maximum Pulsed Drain Current (IDM): 26.8 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 25 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
Maximum Turn Off Time (toff): 170 ns
JESD-30 Code: O-CBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .24 ohm
Avalanche Energy Rating (EAS): 240 mJ
JEDEC-95 Code: TO-205AF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Reference Standard: MIL-19500
Maximum Drain Current (Abs) (ID): 6.7 A
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