Infineon Technologies - IRHG53110

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IRHG53110 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHG53110
Description N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: MO-036AB;
Datasheet IRHG53110 Datasheet
In Stock309
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.6 A
Maximum Pulsed Drain Current (IDM): 6.4 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 14
Maximum Power Dissipation (Abs): 1.4 W
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-CDIP-T14
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .29 ohm
Avalanche Energy Rating (EAS): 130 mJ
JEDEC-95 Code: MO-036AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 1.6 A
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