Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRHG57110 |
| Description | N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: SWITCHING; |
| Datasheet | IRHG57110 Datasheet |
| In Stock | 119 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 37 ns |
| Maximum Drain Current (ID): | 1.6 A |
| Maximum Pulsed Drain Current (IDM): | 6.4 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 14 |
| Maximum Power Dissipation (Abs): | 1.4 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| Maximum Turn Off Time (toff): | 45 ns |
| JESD-30 Code: | R-CDIP-T14 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .29 ohm |
| Avalanche Energy Rating (EAS): | 130 mJ |
| JEDEC-95 Code: | MO-036AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Additional Features: | HIGH RELIABILITY |
| Reference Standard: | RH - 100K Rad(Si) |
| Maximum Drain Current (Abs) (ID): | 1.8 A |
