Infineon Technologies - IRHG7110

  1. Home
  2. Infineon Technologies - IRHG7110
IRHG7110 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRHG7110
Description N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Terminal Finish: TIN LEAD; Additional Features: RADIATION HARDENED;
Datasheet IRHG7110 Datasheet
In Stock441
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SEPARATE, 4 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 14
Maximum Power Dissipation (Abs): 1.4 W
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-CDIP-T14
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .7 ohm
JEDEC-95 Code: MO-036AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: RADIATION HARDENED
Maximum Drain Current (Abs) (ID): 1 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
441 - -

Popular Products

Category Top Products

FDN304P_NL by Fairchild Semiconductor

FDN304P_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN304P_NL is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.4A and Drain-Source On Resistance of 0.052 ohm. The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 0.5W at 150°C.
FDC8602 by Fairchild Semiconductor

FDC8602

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: MO-193AA;
NTR5103NT1G by Onsemi

NTR5103NT1G

Onsemi

NTR5103NT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.26A drain current, and 2.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.42W at 150°C.
DMG1012UW-7 by Diodes Incorporated

DMG1012UW-7

Diodes Incorporated

DMG1012UW-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.45 ohm on-resistance. Its small outline package and -55 to 150°C operating range make it suitable for various electronic devices.
DMN3404L-7 by Diodes Incorporated

DMN3404L-7

Diodes Incorporated

Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
FDC6312P by Fairchild Semiconductor

FDC6312P

Fairchild Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
2N7002P,215 by Nexperia

2N7002P,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .36 A; Terminal Position: DUAL; Peak Reflow Temperature (C): 260;
BSS138 by Diodes Incorporated

BSS138

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI2333DDS-T1-GE3 by Vishay Intertechnology

SI2333DDS-T1-GE3

Vishay Intertechnology

SI2333DDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 12V breakdown voltage and 6A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.7W. The transistor features a small outline package style and can withstand temperatures from -55 to 150°C.
MMBF170Q-13-F by Diodes Incorporated

MMBF170Q-13-F

Diodes Incorporated

Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
FDC3601N by Fairchild Semiconductor

FDC3601N

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Drain-Source On Resistance: .5 ohm; Package Shape: RECTANGULAR;
FDG6332C-F085P by Onsemi

FDG6332C-F085P

Onsemi

Onsemi's FDG6332C-F085P is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm RDS(on). Operating from -55 to 150°C, this MOSFET is AEC-Q101 compliant and comes in a small outline package.
BSS138BKS,115 by Nexperia

BSS138BKS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .32 A; Package Shape: RECTANGULAR; Additional Features: LOGIC LEVEL COMPATIBLE;
DMP1045U-7 by Diodes Incorporated

DMP1045U-7

Diodes Incorporated

DMP1045U-7 by Diodes Inc. is a P-channel FET with 12V DS breakdown voltage, 5.2A max drain current, and 0.031 ohm max on-resistance. Ideal for switching applications in small outline packages, operating at up to 150°C with matte tin finish and gull wing terminals.
2N7000 by Motorola

2N7000

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; No. of Elements: 1;
FDMA1032CZ by Fairchild Semiconductor

FDMA1032CZ

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Additional Features: ESD PROTECTION; Maximum Drain Current (Abs) (ID): 3.7 A;
2N7000 by Diodes Incorporated

2N7000

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: O-PBCY-T3; Maximum Operating Temperature: 150 Cel;
BSS123LT1 by Onsemi

BSS123LT1

Onsemi

BSS123LT1 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications, this transistor operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals for surface mount assembly.
2N7002W by Fairchild Semiconductor

2N7002W

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Feedback Capacitance (Crss): 7 pF; Terminal Finish: MATTE TIN;
AO3407A by Alpha & Omega Semiconductor

AO3407A

Alpha & Omega Semiconductor

AO3407A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package, operating at up to 150°C.