Infineon Technologies - IRHQ3110PBF

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IRHQ3110PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHQ3110PBF
Description N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 28; Package Shape: SQUARE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRHQ3110PBF Datasheet
In Stock314
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 85 mJ
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 12 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 28
Minimum DS Breakdown Voltage: 100 V
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-CQCC-N28
No. of Elements: 4
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .6 ohm
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