IRHQ8110PBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRHQ8110PBF
Description	N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE; No. of Elements: 4;
Datasheet	IRHQ8110PBF Datasheet
In Stock	778

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	85 mJ
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3 A
Maximum Pulsed Drain Current (IDM):	12 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	28
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	S-CQCC-N28
No. of Elements:	4
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.75 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
778	-	-

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