Infineon Technologies - IRHYB597Z30CMPBF

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IRHYB597Z30CMPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHYB597Z30CMPBF
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Pulsed Drain Current (IDM): 80 A; Maximum Drain Current (ID): 20 A;
Datasheet IRHYB597Z30CMPBF Datasheet
In Stock385
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 125 ns
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 80 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 75 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
Maximum Turn Off Time (toff): 120 ns
JESD-30 Code: R-XSIP-P3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .072 ohm
Avalanche Energy Rating (EAS): 200 mJ
Maximum Feedback Capacitance (Crss): 114 pF
JEDEC-95 Code: TO-257AA
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Reference Standard: RH - 100K Rad(Si)
Maximum Drain Current (Abs) (ID): 20 A
Peak Reflow Temperature (C): NOT SPECIFIED
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