Infineon Technologies - ISC011N06LM5

ISC011N06LM5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number ISC011N06LM5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 188 W; Terminal Form: FLAT; No. of Terminals: 8;
Datasheet ISC011N06LM5 Datasheet
In Stock682
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 288 A
Maximum Pulsed Drain Current (IDM): 1152 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 188 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.15 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 570 mJ
Maximum Feedback Capacitance (Crss): 90 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Peak Reflow Temperature (C): 260
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