Infineon Technologies - ISK036N03LM5

ISK036N03LM5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number ISK036N03LM5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 11 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 7 mJ;
Datasheet ISK036N03LM5 Datasheet
In Stock348
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 7 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 60 pF
Maximum Drain Current (ID): 44 A
Maximum Pulsed Drain Current (IDM): 174 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): 11 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0046 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
348 $0.313 $108.924

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