ISP16DP10LM by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	ISP16DP10LM
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 108 mJ;
Datasheet	ISP16DP10LM Datasheet
In Stock	323

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	108 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	44 pF
Maximum Drain Current (ID):	3.9 A
Maximum Pulsed Drain Current (IDM):	15.6 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	4
Minimum DS Breakdown Voltage:	100 V
Maximum Power Dissipation (Abs):	5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.16 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
323	-	-

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