ISP25DP06LM by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	ISP25DP06LM
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G4;
Datasheet	ISP25DP06LM Datasheet
In Stock	219

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	1.9 A
Maximum Pulsed Drain Current (IDM):	7.6 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.25 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	257 mJ
Maximum Feedback Capacitance (Crss):	15 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Additional Features:	TR, 7 INCH; 1000

Pricing (USD)

Qty.	Unit Price	Ext. Price
219	-	-

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