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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | ISZ24DP10LM |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; No. of Terminals: 8; Case Connection: DRAIN; |
Datasheet | ISZ24DP10LM Datasheet |
In Stock | 17 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 10.3 A |
Maximum Pulsed Drain Current (IDM): | 41.1 A |
Surface Mount: | YES |
No. of Terminals: | 8 |
Maximum Power Dissipation (Abs): | 63 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | S-PDSO-N8 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .245 ohm |
Avalanche Energy Rating (EAS): | 221 mJ |
Maximum Feedback Capacitance (Crss): | 32 pF |
Polarity or Channel Type: | P-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 100 V |
Reference Standard: | IEC-61249-2-21; IEC-68-1 |