Infineon Technologies - JANSF2N7390

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JANSF2N7390 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSF2N7390
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Package Style (Meter): CYLINDRICAL; JEDEC-95 Code: TO-205AF;
Datasheet JANSF2N7390 Datasheet
In Stock716
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4 A
Maximum Pulsed Drain Current (IDM): 16 A
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 25 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .92 ohm
Avalanche Energy Rating (EAS): 171 mJ
JEDEC-95 Code: TO-205AF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 200 V
Qualification: Qualified
Additional Features: HIGH RELIABILITY
Reference Standard: MIL-19500/630
Maximum Drain Current (Abs) (ID): 4 A
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