Infineon Technologies - JANSH2N7503U8

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JANSH2N7503U8 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANSH2N7503U8
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Maximum Operating Temperature: 150 Cel; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
Datasheet JANSH2N7503U8 Datasheet
In Stock617
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 14.6 ns
Maximum Drain Current (ID): 6.9 A
Maximum Pulsed Drain Current (IDM): 27.6 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 23 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
Maximum Turn Off Time (toff): 49 ns
JESD-30 Code: R-CBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .246 ohm
Avalanche Energy Rating (EAS): 24 mJ
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Additional Features: HIGH RELIABILITY
Reference Standard: MIL-19500; RH - 1000K Rad(Si)
Maximum Drain Current (Abs) (ID): 6.9 A
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